2SC4583

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1200 800 7 3 6 1 2 50 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PT TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.1A; IB= 0 IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A At rated Voltage At rated Voltage At rated Voltage IC= 1.5A; VCE= 5V IC= 1mA; VCE= 5V IC= 0.3A; VCE= 10V 8 7 8 MIN 800 2SC4583 TYP. MAX UNIT V 1.0 1.5 100 100 100 V V μA μA μA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 1.5A, IB1= 0.3A; IB2= -0.6A; RL= 167Ω; VBB2= 4V 0.5 3.5 0.3 μs μs μs isc Website：www.iscsemi.cn 2