2SC4584

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 800 7 6 12 3 6 65 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.92 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICEO hFE-1 hFE-2 fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current At rated voltage Collector cut-off current DC current gain DC current gain Transition frequency IC=3 A ; VCE=5V IC=1mA ; VCE=5V IC=0.6A ; VCE=10V 8 7 8 MHz 0.1 mA CONDITIONS IC=3A;IB=0.6 A IC=3A;IB=0.6 A IC=0.2A;IB=0 At rated voltage 800 0.1 MIN TYP. MAX 1.0 1.5 UNIT V V V mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A;RL=85Ω IB1=0.6A; IB2=1.2A VBB2=4V 0.5 3.5 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4584 Fig.2 Outline dimensions 3