2SC4589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IC(surge) IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 10 20 0.6 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4589 TYP. MAX UNIT V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 800 V V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=8A; IB=1.6 A 5.0 V VBE(sat) Base-emitter saturation voltage IC=8A; IB=1.6 A 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 500 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=5V 8 38 tf Fall time ICP=7A; IB1=1.4A 0.2 0.5 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4589 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3