2SC4595

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4595 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 60 5 12 30 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4595 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 IE=50μA , IC=0 IC=6A, IB=0.3A 60 V V(BR)EBO VCEsat Emitter-base breakdown voltage 5 V Collector-emitter saturation voltage 0.3 V VBEsat Base-emitter saturation voltage IC=6A, IB=0.3A 1.2 V μA μA ICBO Collector cut-off current VCB=100V, IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=2A ; VCE=2V 60 320 fT Transition frequency IC=0.5A ; VCE=10V 120 MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4595 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3