2SC4596

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757 APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 10 A 25 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 3A ; IB= 0.3A, L= 1mH IC= 50μA; IE= 0 IE= 50μA; IC= 0 IC= 3A; IB= 0.15A B 2SC4596 MIN 60 100 5 TYP. MAX UNIT V V V 0.3 0.5 1.2 1.5 10 10 100 120 80 320 V V V V μA μA IC= 4A; IB= 0.2A B IC= 3A; IB= 0.15A B IC= 4A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 5V; IC= 0 IC= 1A ; VCE= 2V IC= 0.5A ; VCE= 10V IE=0; VCB= 10V; ftest= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A ; IB1= -IB2= 0.15A RL= 10Ω;VCC≈ 30V 0.3 1.5 0.3 μs μs μs hFE classifications E 100-200 F 160-320 isc Website：www.iscsemi.cn 2