2SC4663

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4663 DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 5 10 2 4 25 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4663 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT ton ts tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time Storage time Fall time IC=2.5A;IB1=0.5A IB2=1A ,RL=60Ω VBB2=4V At rated volatge IC=2.5A ; VCE=2V IC=1mA ; VCE=2V IC=0.5A ; VCE=10V 10 10 13 0.3 1.0 0.1 MHz μs μs μs 0.1 25 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A MIN 200 1.0 1.5 TYP. MAX UNIT V V V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4663 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3