2SC4689

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4689 DESCRIPTION ・With TO-3PML package ・Complementary to 2SA1804 ・Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS ・Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 8 16 0.8 70 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO ICBO IEBO hFE-1 hFE-2 VCE(sat) VBE fT Cob PARAMETER Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=6A ; IB=0.6A IC=4A ; VCE=5V IC=1A ; VCE=5V IE=0;VCB=10V;f=1MHz 55 35 75 0.35 0.95 30 190 MIN 120 2SC4689 TYP. MAX UNIT V 5 5 160 μA μA 2 1.5 V V MHz pF hFE-1 classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4689 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4689 4