2SC4744

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current Collector Power Dissipation @ TC=25℃ Junction Temperature 7 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4744 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 500 μA hFE DC Current Gain IC= 1A ; VCE= 5V 25 VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time ICP= 5A , IB1= 1A; IB2= -2A 0.4 μs isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4744 isc Website：www.iscsemi.cn