2SC4757

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A ICP Collector Current-Pulse 14 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3.5 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4757 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 4 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1 3 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 175 pF Switching times Resistive load tstg Storage Time ICP= 5A , IB1= 1A ; IB2= -2A RL=39Ω 2.5 μs tf Fall Time 0.2 μs isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 isc Website：www.iscsemi.cn 4