2SC4763

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 DESCRIPTION ・With TO-3P(H)IS package ・High speed ,high speed ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output for medium resolution display PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 ±8 ±16 4 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=300mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=6A IC=0.1A ; VCE=10V 1 83 8 5 170 1.3 3 1.8 12 9 pF V MHz MIN 5 5 1.5 1 250 TYP. MAX UNIT V V V mA mA Switching times resistive load ts tf Storage time Fall time 1.8 0.1 3.0 0.2 μs μs ICP=6A;IB1 =1.2A IB2=-2.4A; RL=33Ω 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4763 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 4