2SC4793

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4793 DESCRIPTION ・With TO-220F package ・Complement to type 2SA1837 ・High transition frequency APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25℃ PC Collector dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 1 0.1 20 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.5A IB=50mA IC=0.5A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 20 100 MIN 230 2SC4793 TYP. MAX UNIT V 1.5 1.0 1.0 1.0 320 V V μA μA pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4793 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4793 4