2SC4806

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION ·High Breakdown Voltage: VCBO= 1700V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 2.5 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4806 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 3.5A; VCE= 5V 3.5 7.5 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 240 pF Switching Times; Resistive Load tstg Storage Time IC= 3.5A; IB1= 0.7A; IB2= -1.4A; RL= 56Ω 3.0 μs tf Fall Time 0.2 μs isc Website：www.iscsemi.cn 2