2SC4848

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 12 V IC ICM Collector Current-Continuous 7 A Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ 15 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEX(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS ICP= 8A; IB1= -IB2= 0.5A, IC= 5A; L= 200μH, clamped IC= 5A; IB= 0.5A B 2SC4848 MIN 125 TYP. MAX UNIT V 0.6 1.2 10 2.0 10 100 20 150 200 V V μA mA μA IC= 5A; IB= 0.5A B VCB= 100V; IE= 0 VCE= 100V; IB= 0; Ta= 125℃ VEB= 12V; IC= 0 IC= 3A; VCE= 5V IE= -0.5A; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A ;IB1= -IB2= 0.5A; RL= 10Ω; VCC≈ 50V 0.5 2.5 0.5 μs μs μs isc Website：www.iscsemi.cn 2