2SC4849

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4849 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 250 120 12 7 15 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A ;IB=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=100V; IE=0 VEB=12V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=10V f=1MHz ; VCB=10V 100 20 150 MIN 120 TYP. 2SC4849 MAX UNIT V 0.6 1.2 10 10 200 V V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5A, IB1=0.5A IB2=-0.5A; VCC≈50V RL=10Ω 0.5 2.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4849 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3