2SC4878

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4878 DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 10 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4878 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 800 V VCE(sat) VBE(sat) Collector-emitter saturation voltage IC=8A ; IB=1.6A IC=8A ; IB=1.6A 5.0 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 50 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=8A ; VCE=5V 5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4878 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3