2SC4881

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4881 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) B APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25℃ VALUE 60 50 5 5 8 1 20 UNIT V V V A A A PT Total Power Dissipation @Ta=25℃ TJ Tstg Junction Temperature Storage Temperature 2.0 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 10mA; IB= 0 IC= 2.5A; IB= 125mA IC= 2.5A; IB= 125mA VCB= 50V ; IE= 0 VEB= 6V; IC= 0 IC= 1A ; VCE= 1V IC= 2.5A ; VCE= 1V IE= 0 ; VCB= 10V; f= 1.0MHz IC= 1A ; VCE= 4V 100 60 MIN 50 2SC4881 TYP. MAX UNIT V 0.4 1.3 1 1 320 V V μA μA 45 100 pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL= 12Ω,IB1= -IB2= 125mA, VCC= 30V 0.1 0.8 0.1 μs μs μs isc Website：www.iscsemi.cn 2