2SC4883

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION ·With TO-220F package ·Complement to type 2SA1859/1859A APPLICATIONS ·For audio output driver and TV velocity-modulation applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC4883 VCBO Collector-base voltage 2SC4883A 2SC4883 VCEO Collector-emitter voltage 2SC4883A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 180 6 2 1 20 150 -55~150 V A A W ℃ ℃ Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC4883 IC=10mA ; IB=0 2SC4883A VCEsat Collector-emitter saturation voltage 2SC4883 2SC4883A IEBO hFE fT COB Emitter cut-off current DC current gain Transition frequency Output capacitance IC=0.7A;IB=70mA VCB=150V;IE=0 VCB=180V;IE=0 VEB=6V; IC=0 IC=0.7A ; VCE=10V IC=-0.7A ; VCE=12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SC4883 2SC4883A MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 1.0 10 10 10 60 120 30 240 MHz pF V μA μA μA ICBO Collector cut-off current Switching time ton ts tf Turn-on time Storage time Fall time IC=1A ;IB1=-IB2=0.1A VCC=20V ,RL=20Ω 0.50 1.50 0.50 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4883 2SC4883A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A 4