2SC4916

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 DESCRIPTION ·With TO-3P(H)IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 7 14 3.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=300mA ;IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=5A IE=0.1A ; VCE=10V 1 83 8 3.8 160 1.3 3 1.8 MIN 5 5 1.5 1 250 20 8 pF V MHz TYP. MAX UNIT V V V mA mA Switching times resistive load ts tf Storage time Fall time ICP=5A;IB1 =1A IB2=-2A; RL=39Ω 2.0 0.1 3.0 0.2 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4916 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 4