2SC4923

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High reliability ·High breakdown voltage APPLICATIONS ·High-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC4923 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 25 3 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 70 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) ICBO ICES IEBO hFE-1 hFE-2 VCE(sat) VBE(sat) tstg tf PARAMETER Collector-emitter sustaining voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Storage time Fall time CONDITIONS IC=100mA ;IB=0 VCE=800V; IE=0 VEB=1500V; RBE=0 VCE=4V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=6A ; IB=1.5A IC=6A ; IB=1.5A IC=6A; IB1=1.2A;IB2=-2.4A IC=6A; IB1=1.2A;IB2=-2.4A 0.1 8 4 8 5 1.5 3 0.2 V V μs μs MIN 800 10 1.0 1.0 TYP. MAX UNIT V μA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4923 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 4