2SC4927

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCEO VEBO IC IC(peak) IC(surge) Io PC Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector current-surge C to E diode forward current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector CONDITIONS VALUE 1500 6 8 9 18 8 50 150 -55~150 UNIT V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf PARAMETER Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage Fall time CONDITIONS IE=500mA ;IC=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=6A ; IB=1.2A IC=6A ; IB=1.2A IF=8A ICP=6A; fH=31.5kHz IB1=1.2A;IB2=-2.4A MIN 6 0.5 25 5 1.5 2.0 0.5 V V V μs TYP. MAX UNIT V mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4927 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 4