2SC4960

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min) ·High Switching Speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 0.3 A 40 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 1mA; IB= 0 B 2SC4960 MIN 800 TYP. MAX UNIT V IC= 0.2A; IB= 40mA IC= 0.2A; IB= 40mA VCB= 900V; IE= 0 VEB= 7V; IC= 0 IC= 50mA; VCE= 5V IC= 0.5A; VCE= 5V IC= 50mA; VCE= 10V; f= 1MHz 6 3 4 1.5 1.0 50 50 V V μA μA MHz Switching times ton tstg tf Turn-On Time Storage Time Fall Time IC= 0.2A; IB1= 40mA, IB2= -80mA; VCC= 250V 1.0 3.0 1.0 μs μs μs isc Website：www.iscsemi.cn 2