2SC508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ・For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 180 60 6 4 25 150 -65~200 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V μA μA ICBO Collector cut-off current VCB=180V;IE=0 100 IEBO Emitter cut-off current VEB=6V; IC=0 100 hFE DC current gain IC=4A ; VCE=5V 20 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC508 Fig.2 outline dimensions 3