2SC5099

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5099 DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1907 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 60 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=2A;IB=0.2 A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 110 MIN 80 TYP. 2SC5099 MAX UNIT V 0.5 10 10 180 V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;RL=10Ω IB1=-IB2=0.3A VCC=30V 0.16 2.60 0.34 μs μs μs hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5099 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5099 4