2SC5129

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 DESCRIPTION ・With TO-3P(H)IS package ・High speed ・High voltage ・Low saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,colorTV ・High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 10 20 5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=6A; IB=1.5A IC=6A ;IB=1.5A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 10 4 135 1.7 MIN 600 TYP. 2SC5129 MAX UNIT V 3.0 1.4 1 10 30 8 V V mA μA pF MHz Switching times (inductive load) ts tf Storage time Fall time ICP=5A;IB1(end) =1A fH=64kHz 4.0 0.3 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5129 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 4