2SC5143

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5143 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1700 700 5 10 20 5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=400mA ;IC=0 IC=6A; IB=1.5A IC=6A ;IB=1.5A VCB=1700V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=6A IE=0.1A ; VCE=10V 83 8 4 MIN 5 2SC5143 TYP. MAX UNIT V 3.0 0.9 1.2 1 250 25 8.5 185 1.8 2 V V mA mA pF V MHz Switching times (inductive load) ts tf Storage time Fall time 4 0.2 6 0.5 μs μs ICP=5A;IB1(end) =1A fH=31.5kHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5143 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5143 4