2SC5149

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5149 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for medium resolution display color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse 16 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 4 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5149 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.3A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.3A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 66 200 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 25 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 3.8 8.0 VECF C-E Diode Forward Voltage IF= 5A 1.8 V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 2 MHz COB Output Capacitance IE=0 ; VCB=10V; ftest=1.0MHz 110 pF Switching times tstg Storage Time ICP= 5A, IB1(end)= 1.1A ; fH= 31.5kHz 6.0 μs tf Fall Time 0.5 μs isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5149 isc Website：www.iscsemi.cn