2SC5150

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5150 DESCRIPTION ·High Breakdown Voltage: VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse 20 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5150 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.2 V ICBO Collector Cutoff Current VCB= 1700V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 28 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 4 8.5 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 2 MHz COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 185 pF Switching times tstg Storage Time ICP= 5A; IB1(end)= 1.0A; fH= 64kHz 4.0 μs tf Fall Time 0.3 μs isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5150 isc Website：www.iscsemi.cn