2SC5196

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 0.6 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5196 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V ; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 35 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 75 pF fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz hFE-1 Classifications R 55-110 O 80-160 isc Website：www.iscsemi.cn 2