INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5197
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940
APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
0.8
A
PC
80
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC5197
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
B
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
5
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
35
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
120
pF
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
30
MHz
hFE-1 Classifications R 55-110 O 80-160
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5197
isc Website:www.iscsemi.cn
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