2SC5199

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 160 160 5 12 1.2 120 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A; IB=0.8A IC=6A ; VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 35 30 170 MIN 160 TYP. 2SC5199 MAX UNIT V 2.5 1.5 5 5 160 V V μA μA MHz pF hFE-1 classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5199 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 4