2SC5200

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 1.5 A PC 150 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5200 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= -5V 1.5 V ICBO Collector Cutoff Current VCB= 230V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 7A ; VCE= 5V 35 COB Output Capacitance IE=0 ; VCB= 10V;ftest= 1.0MHz 200 pF fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz hFE-1 Classifications R 55-110 O 80-160 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 isc Website：www.iscsemi.cn