2SC5241

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5241 DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 600 450 7 5 10 2 4 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 4.16 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5241 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=2.5A ; IB=0.5A IC=2.5A ; IB=0.5A Rated VCBO Rated VCEO Rated VEBO IC=2.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.5A ; VCE=10V 10 5 20 MHz MIN 450 1.0 1.5 0.1 0.1 0.1 TYP. MAX UNIT V V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=2.5A; IB1=0.5A IB2=1A VBB2=4V ,RL=60Ω 0.5 2.0 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5241 Fig.2 Outline dimensions 3