2SC5248

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ 1.5 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5248 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 IE= 50μA; IC= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage 5 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V μA μA Collector Cutoff Current VCB= 160V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 hFE DC Current Gain IC= 0.1A; VCE= 5V 60 200 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 150 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 20 pF hFE Classifications D 60-120 E 100-200 isc Website：www.iscsemi.cn 2