2SC5249

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1.5 A PC 35 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5249 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.2 V ICBO Collector Cutoff Current VCB= 600V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE DC Current Gain IC= 1A ; VCE= 4V 20 40 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Current-Gain—Bandwidth Product IE= -0.3A ; VCE= 12V 6 MHz Switching Times ton Turn-On Time IC= 1A; IB1= -IB2= 0.1A; VCC= 200V; RL= 200Ω 1.0 μs tstg Storage Time 19 μs tf Fall Time 1.0 μs isc Website：www.iscsemi.cn 2