2SC5250

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5250 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCEO VEBO IC ICP ID PC Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Diode current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector CONDITIONS VALUE 1500 6 8 16 8 50 150 -55~150 UNIT V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5250 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO ICES hFE-1 hFE-2 VCE(sat) VBE(sat) VECF tf PARAMETER Emitter-base breakdown voltage Collector cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Forward voltage of damper diode Fall time CONDITIONS IC=400mA ;IB=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=5A ; IB=1.25A IC=5A ; IB=1.25A IF=8A ICP=5A;IB1=1A; fH=31.5kHz 0.2 6 4 MIN 6 500 25 7 5 1.5 2 0.4 V V V μs TYP. MAX UNIT V μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5250 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5250 4