2SC5296

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed ・Built in damper diode APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 16 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1.25 A IC=5A;IB=1.25 A IC=100mA;IB=0 VEB=4V IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V 15 4 800 40 130 10 1 25 7 MIN TYP. MAX 5 1.5 UNIT V V V mA μA mA Switching times tstg tf Storage time Fall time IC=4A;RL=50Ω IB1=0.8A; IB2=-1.6A VCC=200V 3.0 0.1 0.2 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5296 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 4