2SC5305

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION ·High Breakdown Voltage :V(BR)CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ 12 A 2 W PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5305 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V hFE-1 DC Current Gain IC= 0.3A; VCE= 5V 30 50 hFE-2 DC Current Gain IC= 2.5A; VCE= 5V 10 ICBO Collector Cutoff Current VCB= 600V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1200V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1.0 mA Switching Times ts Storage Time IC= 3.5A;IB1= 0.6A; IB2= -1.2A 2.5 μs tf Fall Time 0.15 μs isc Website：www.iscsemi.cn