2SC5352

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 80 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA ; IB= 0 IC= 1mA ; IE= 0 IC= 4A; IB= 0.5A B 2SC5352 MIN 400 600 TYP. MAX UNIT V V 1.0 1.3 0.1 1.0 20 V V mA mA IC= 4A; IB= 0.5A B VCB= 480V ; IE=0 VEB= 7V; IC=0 IC= 1A ; VCE= 5V Switching times tr tstg tf Rise Time Storage Time Fall Time IB1= 0.5A; IB2= -1A; RL= 50Ω PW=20μs; Duty Cycle≤1%; VCC≈200V 0.5 2.0 0.3 μs μs μs isc Website：www.iscsemi.cn 2