2SC5354

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 2 A PC 100 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 1mA; IE= 0 IC= 2A; IB= 0.4A B 2SC5354 MIN 800 900 TYP. MAX UNIT V V 1.0 1.3 0.1 1.0 10 15 V V mA mA IC= 2A; IB= 0.4A B VCB= 800V; IE=0 VEB= 7V; IC=0 IC= 10mA; VCE= 5V IC= 0.5A; VCE= 5V Switching times tr tstg tf Rise Time Storage Time Fall Time IC= 4A; IB1= 0.4A; IB2= -0.8A; RL= 200Ω; PW=20μs; VCC≈ 400V; Duty Cycle≤1% 0.7 4.0 0.5 μs μs μs isc Website：www.iscsemi.cn 2