2SC5359

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 15 1.5 180 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 30 200 MIN 230 0.4 1.0 TYP. 2SC5359 MAX UNIT V 3.0 1.5 5 5 160 V V μA μA MHz pF hFE-1 classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5359 Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 4