2SC5382

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION ・With TO-220F package ・High Voltage ・High speed switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1200 550 9 6 12 3 6 40 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.13 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5382 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 550 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6 A 1.0 V VBEsat ICBO ICEO IEBO hFE-1 Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IC=3A; IB=0.6 A VCB=1200V; IE=0 VCE=550V; IB=0 VEB=9V; IC=0 IC=3A ; VCE=5V 10 1.5 0.1 0.1 0.1 V mA mA mA hFE-2 DC current gain IC=1mA ; VCE=5V 10 Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;IB1=0.6A ;IB2=1.2A RL=50Ω;VBB2=4V 1.3 4.0 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5382 Fig.2 outline dimensions 3