INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5407
DESCRIPTION ·High Breakdown Voltage: VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
1700
V
VCES
Collector-Emitter Voltage
1700
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current- Peak
20
A
IB
B
Base Current- Continuous Collector Power Dissipation @ TC=25℃
8
A
100 W
PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC5407
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7.5A; IB= 1.88A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 7.5A; IB= 1.88A VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 VEB= 5V; IC= 0
1.5 50 1.0 50
V μA mA μA
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
IC= 7.5A; VCE= 5V
6
14
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
3
MHz
Switching Times
tstg
Storage Time IC= 8A, IB1= 2A; IB2= -4A
4.0
μs
tf
Fall Time
0.3
μs
isc Website:www.iscsemi.cn
2
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