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2SC5407

2SC5407

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC5407 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SC5407 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5407 DESCRIPTION ·High Breakdown Voltage: VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak 20 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ 8 A 100 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5407 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 VEB= 5V; IC= 0 1.5 50 1.0 50 V μA mA μA ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 7.5A; VCE= 5V 6 14 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz Switching Times tstg Storage Time IC= 8A, IB1= 2A; IB2= -4A 4.0 μs tf Fall Time 0.3 μs isc Website:www.iscsemi.cn 2
2SC5407 价格&库存

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