2SC5417

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High reliability APPLICATIONS ・For inverter lighting applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 1200 600 9 3 6 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5417 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3 A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3 A 1.5 V μA ICBO Collector cut-off current VCB=600V; IE=0 10 ICES Collector cut-off current VCE=1200V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 30 50 hFE-2 DC current gain IC=1.0A ; VCE=5V 10 Switching times μs μs ts Storage time IC=1.5A;IB1=0.3A ;IB2=-0.6A 2.5 tf Fall time 0.15 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5417 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5417 4