2SC5439

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION ・With TO-220F package ・High collector breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulator applications ・High voltage switching applications ・DC-DC converter applications ・Inverter lighting applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 1000 450 9 8 16 1 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5439 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V VCEsat Collector-emitter saturation voltage IC=3.2A; IB=0.64 A 1.0 V VBEsat Base-emitter saturation voltage IC=3.2A; IB=0.64 A 1.5 V μA μA ICBO Collector cut-off current VCB=1000V; IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 10 hFE-1 DC current gain IC=1mA ; VCE=5V 10 hFE-2 DC current gain IC=1A ; VCE=5V 14 34 Switching times μs μs μs ton Turn-on time IB1=0.64A ;IB2=1.28A VCC≈200V;RL=62.5Ω 0.2 ts Storage time 2.0 3.5 tf Fall time 0.15 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5439 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 4