2SC5764

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ 14 A 2 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 5mA; RBE= ∞ IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 4A; IB= 0.8A B 2SC5764 MIN 400 700 8 TYP. MAX UNIT V V V 0.8 1.5 10 10 20 10 10 80 17 50 V V μA μA IC= 4A; IB= 0.8A B VCB= 400V; IE= 0 VEB= 5V; IC= 0 IC= 0.8A; VCE= 5V IC= 4A; VCE= 5V IC= 1mA; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 0.8A; VCE= 10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A, IB1= 1A; IB2= -2A; RL= 40Ω; VCC= 200V 0.5 2.5 0.25 μs μs μs hFE-1 Classifications M 20-40 N 30-50 isc Website：www.iscsemi.cn 2