2SC5885

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IB B Base Current- Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ 9 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5885 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 1.5 50 1.0 5 10 V μA mA ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 IC= 3A; VCE= 5V hFE DC Current Gain VECF C-E Diode Forward Voltage IF= 3A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V; f= 0.5MHz 3 MHz Switching times; Resistive load tstg Storage Time IC= 3A, IB1= 0.75A; IB2= -1.5A 5.0 μs tf Fall Time 0.5 μs isc Website：www.iscsemi.cn 2