2SC5887

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage: VCE(sat)= 0.4V(Max)@ (IC= 7A; IB= 0.35A) ·Complement to Type 2SA2098 B APPLICATIONS ·Relay drivers, lamp drivers, motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25℃ VALUE 60 50 6 15 20 3 30 UNIT V V V A A A PT Total Power Dissipation @Ta=25℃ TJ Tstg Junction Temperature Storage Temperature 2.0 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 1mA; RBE= ∞ IC= 0.1mA; IE= 0 IE= 0.1mA; IC= 0 IC= 7A; IB= 0.35A B 2SC5887 MIN 50 60 6 TYP. MAX UNIT V V V 0.4 1.4 10 10 180 100 300 560 V V μA μA IC= 7A; IB= 0.35A B VCB= 40V; IE= 0 VEB= 4V; IC= 0 IC= 1A; VCE= 2V IE= 0; VCB= 10V; f= 1.0MHz IC= 1A; VCE= 10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A, IB1= -IB2= 0.25A, VCC= 20V 50 700 40 ns ns ns isc Website：www.iscsemi.cn 2