2SC681

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC681 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 70V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range MAX 200 70 5 6 20 2 50 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC681 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.6A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 mA tf Fall Time IC= 5A; VCC= 25V 0.5 μs isc Website：www.iscsemi.cn