2SC789

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC789 DESCRIPTION ・With TO-220C package ・Low collector saturation voltage APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 70 70 5 4 1 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC789 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25m A;IB=0 70 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA; IC=0 IC=2 A;IB=0.2 A 5 V Collector-emitter saturation voltage 1.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=70V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 40 240 fT Transition frequency IC=0.5A ; VCE=10V 3 MHz hFE classifications O 40-80 R 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC789 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3