2SC867

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC867 DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=400V(min) APPLICATIONS ・For high voltage and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 150 5 1 2 23 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC867 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V μA μA ICBO Collector cut-off current VCB=400V;IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 100 hFE DC current gain IC=0.1A ; VCE=3V 50 fT Transition frequency IC=0.2A ; VCE=10V 8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC867 Fig.2 outline dimensions 3